50N06L-TN3-R datasheet(2/8 Pages) UTC

2 / 8 page

50N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-088.G



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current

TC = 25°C

TC = 100°C

Pulsed Drain Current (Note 2)

IDM

200

Avalanche Energy

Single Pulsed (Note 3)

EAS

480

Repetitive (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

V/ns

Power Dissipation (TC=25°C)

TO-220/TO-263

120

TO-220F

TO-251/TO-252

TO-252D

Junction Temperature

+150

°C

Operation and Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by TJ

3. L=0.38mH, IAS=50A, VDD=25V, RG=20Ω, Starting TJ=25°C

4. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220/TO-220F

TO-263

θJA

°C/W

TO-251/TO-252

TO-252D

100

°C/W

Junction to Case

TO-220

θJC

1.24

°C/W

TO-220F

1.78

°C/W

TO-251/TO-252

TO-252D

2.7

°C/W

TO-263

1.24

°C/W

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