TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C

3–2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

TIP31A, TIP32A

TIP31B, TIP32B

TIP31C, TIP32C

VCEO(sus)

60

80

100

—

—

—

Vdc

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

TIP31A, TIP32A

TIP31B, TIP31C

TIP32B, TIP32C

ICEO

—

—

—

0.3

0.3

0.3

mAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 0)

TIP31A, TIP32A

(VCE = 80 Vdc, VEB = 0)

TIP31B, TIP32B

(VCE = 100 Vdc, VEB = 0)

TIP31C, TIP32C

ICES

—

—

—

200

200

200

µAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

hFE

25

10

—

50

—

Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

VCE(sat)

—

1.2

Vdc

Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

VBE(on)

—

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

—

MHz

Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

—

—

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

Figure 1. Power Derating

T, TEMPERATURE (

°C)

0

100

0

1.0

160

2.0

3.0

60

80

40

140

4.0

TURN–ON PULSE

APPROX

+11 V

Vin 0

VEB(off)

t1

APPROX

+11 V

Vin

t2

TURN–OFF PULSE

t3

t1 ≤ 7.0 ns

100 < t2 < 500 µs

t3 < 15 ns

DUTY CYCLE

≈ 2.0%

APPROX – 9.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

SCOPE

RC

RB

VCC

Vin

Cjd << Ceb

– 4.0 V

Figure 2. Switching Time Equivalent Circuit

0.03

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

0.02

0.1

3.0

0.07

1.0

1.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 10 V

0.5

0.3

0.1

0.05

0.05

0.3

0.5

td @ VEB(off) = 2.0 V

0.03

0.7

2.0

0.07

0.7

tr @ VCC = 30 V

20

120

TC

TA

0

10

20

30

40

TC

TA