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STL65DN3LLH5 bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Dual N-channel 30 V, 0.0059 , 19 A PowerFLAT(5x6) double island, STripFET V Power MOSFET
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STL65DN3LLH5 bảng dữ liệu(HTML) 3 Page - STMicroelectronics

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STL65DN3LLH5
Electrical ratings
Doc ID 18323 Rev 1
3/12
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
Gate-source voltage
± 22
V
ID
(1)
1.
The value is rated according Rthj-c
Drain current (continuous) at TC = 25 °C
65
A
ID
(1)
Drain current (continuous) at TC = 100 °C
41
A
ID
(2)
2.
The value is rated according Rthj-pcb
Drain current (continuous) at TC = 25 °C
19
A
ID
(2)
Drain current (continuous) at TC=100°C
11.8
A
IDM
(3)
3.
Pulse width limited by safe operating area
Drain current (pulsed)
76
A
PTOT
(1)
Total dissipation at TC = 25°C
60
W
PTOT
(2)
Total dissipation at TC = 25°C
4
W
Derating factor
0.03
W/°C
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (drain) (steady state)
2.08
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-ambient
32
°C/W
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAV
Not-repetitive avalanche current,
(pulse width limited by TJ max)
18.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV , VDD = 24 V)
270
mJ



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