STP11NM50N datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

STD11NM50N, STF11NM50N, STP11NM50N

Electrical ratings

Doc ID 17156 Rev 3

3/16

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

DPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

500

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

8.5

8.5 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

6 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

34(1)

PTOT

Total dissipation at TC = 25 °C

dv/dt (3)

ISD ≤ 8.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS,VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

DPAK

TO-220FP

Rthj-case Thermal resistance junction-case max

1.79

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Thermal data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive(1)

Pulse width limited by TJMAX.

EAS

Single pulse avalanche energy (2)

Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

150

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