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SCS215AM

SiC Schottky Barrier Diode

200*

3

A

43*

4

°C

°C

175

-55 to +175

Range of storage temperature

lAbsolute maximum ratings (T

Surge no repetitive forward current

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Continuous forward current

Unit

Value

Repetitive peak forward current

Total power disspation

Junction temperature

650

650

15*

1

34*

5

39*

6

55*

2

A

A

Tube

-

Type

Packaging

Reel size (mm)

C

SCS215AM

Basic ordering unit (pcs)

Tape width (mm)

-

50

Marking

Taping code

lFeatures

23nC

1) Shorter recovery time

A

W

Symbol

lConstruction

Silicon carbide epitaxial planer Shottoky Diode

Parameter

V

V

A

3) High-speed switching possible

lOutline

lInner circuit

lPackaging specifications

TO-220FM

2) Reduced temperature dependence

650V

15A

(1)

(2)

(1) Cathode

(2) Anode

(1)

(2)

1/5

2014.01 - Rev.A