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ACST4-7SB bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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ACST4-7SB bảng dữ liệu(HTML) 4 Page - STMicroelectronics

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Characteristics
ASCT4
4/13
Doc ID 8766 Rev 5
Figure 4.
On-state rms current versus
ambient temperature (free air
convection, full cycle)
Figure 5.
Relative variation of thermal
impedance versus pulse duration
Figure 6.
Relative variation of gate trigger
current (IGT) and voltage (VGT)
versus junction temperature
Figure 7.
Relative variation of holding
current (IH) and latching current (IL)
versus junction temperature
Figure 8.
Surge peak on-state current
versus number of cycles
Figure 9.
Non repetitive surge peak on-state
current and corresponding value of
I2t versus sinusoidal pulse width
IT(RMS)(A)
0.0
0.5
1.0
1.5
2.0
0
25
50
75
100
125
α=180°
TO-220FPAB
DPAK with copper
surface = 0.5 cm2
Ta(°C)
K = [Zth / Rth]
1.0E-02
1.0E-01
1.0E+00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Z
th(j-a)
Z
th(j-c)
TO-220FPAB
DPAK
Tp(s)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
IGT Q3
IGT Q1-Q2
V
Q1-Q2-Q3
GT
IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]
(typical values)
Tj(°C)
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
IH,IL[Tj] / IH,IL[Tj = 25 °C]
Tj(°C)
IH
IL
(typical values)
ITSM(A)
0
5
10
15
20
25
30
35
1
10
100
1000
Non repetitive
T
j initial=25 °C
One cycle
t=20ms
Repetitive
T
C=102°C
Number of cycles
1
10
100
1000
0.01
0.10
1.00
10.00
t (ms)
p
ITSM(A), I²t (A²s)
dl /dt limitation: 100 A / µs
Tj initial = 25 °C
ITSM
I²t



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