công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

Preview PDF HTML

IRLML0030PBF bảng dữ liệu(PDF) 2 Page - International Rectifier

tên linh kiện IRLML0030PBF
Giải thích chi tiết về linh kiện  HEXFETPower MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  IRF [International Rectifier]
Trang chủ  http://www.irf.com
Logo IRF - International Rectifier

IRLML0030PBF bảng dữ liệu(HTML) 2 Page - International Rectifier

  IRLML0030PBF Datasheet HTML 1Page - International Rectifier IRLML0030PBF Datasheet HTML 2Page - International Rectifier IRLML0030PBF Datasheet HTML 3Page - International Rectifier IRLML0030PBF Datasheet HTML 4Page - International Rectifier IRLML0030PBF Datasheet HTML 5Page - International Rectifier IRLML0030PBF Datasheet HTML 6Page - International Rectifier IRLML0030PBF Datasheet HTML 7Page - International Rectifier IRLML0030PBF Datasheet HTML 8Page - International Rectifier IRLML0030PBF Datasheet HTML 9Page - International Rectifier Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
IRLML0030TRPbF
2
www.irf.com
D
S
G
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C
–––
33
40
–––
22
27
VGS(th)
Gate Threshold Voltage
1.3
1.7
2.3
V
IDSS
–––
–––
1
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
2.3
–––
Ω
gfs
Forward Transconductance
9.5
–––
–––
S
Qg
Total Gate Charge
–––
2.6
–––
Qgs
Gate-to-Source Charge
–––
0.8
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.1
–––
td(on)
Turn-On Delay Time
–––
5.2
–––
tr
Rise Time
–––
4.4
–––
td(off)
Turn-Off Delay Time
–––
7.4
–––
tf
Fall Time
–––
4.4
–––
Ciss
Input Capacitance
–––
382
–––
Coss
Output Capacitance
–––
84
–––
Crss
Reverse Transfer Capacitance
–––
39
–––
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
11
17
ns
Qrr
Reverse Recovery Charge
–––
4.0
6.0
nC
–––
–––
–––
–––
pF
A
1.6
21
VDD =15Vd
nA
nC
ns
VDS = VGS, ID = 25μA
VDS =24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
RDS(on)
VGS = 10V, ID = 5.2A d
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
μA
m
Ω
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 4.2A d
MOSFET symbol
showing the
VDS =15V
Conditions
VGS = 4.5V
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
RG = 6.8
Ω
VGS = 4.5V d
di/dt = 100A/μs
d
VGS = 20V
VGS = -20V
TJ = 25°C, IS = 1.6A, VGS = 0V d
integral reverse
p-n junction diode.
VDS = 10V, ID = 5.2A
ID = 5.2A
ID = 1.0A
TJ = 25°C, VR = 15V, IF=1.6A



Html Pages

1 2 3 4 5 6 7 8 9 10


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com