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U310 bảng dữ liệu(PDF) 1 Page - Calogic, LLC |
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U310 bảng dữ liệu(HTML) 1 Page - Calogic, LLC |
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1 / 2 page ![]() N-Channel JFET High Frequency Amplifier U308 – U310 FEATURES •• High Power Gain •• Low Noise •• Dynamic Range Greater The 100dB •• Easily Matched to 75Ω Input ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65 oC to +200oC Operating Temperature Range . . . . . . . . . . . -55 oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300 oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate above 25 oC . . . . . . . . . . . . . . . . . . . . . . . . 4mW/oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package Temperature Range U308-10 Hermetic TO-52 -55 oC to +150oC XU308-10 Sorted Chips in Carriers -55 oC to +150oC CORPORATION PIN CONFIGURATION D S (TO-52) G, C 5021 ELECTRICAL CHARACTERISTICS (TA = 25 oC unless otherwise specified) SYMBOL PARAMETER U308 U309 U310 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX IGSS Gate Reverse Current -150 -150 -150 pA VGS = -15V -150 -150 -150 nA VGS = 0 TA = 125 oC BVGSS Gate-Source Breakdown Voltage -25 -25 -25 V IG = -1 µA, VDS = 0 VGS(off) Gate-Source Cutoff Voltage -1.0 -6.0 -1.0 -4.0 -2.5 -6.0 VDS = 10V, ID = 1nA IDSS Saturation Drain Current (Note 1) 12 60 12 30 24 60 mA VDS = 10V, VGS = 0 VGS(f) Gate-Source Forward Voltage 1.0 1.0 1.0 V IG = 10mA, VDS = 0 gfg Common-Gate Forward Transconductance (Note 1) 10 17 10 17 10 17 mS VDS = 10V, ID = 10mA f = 1kHz gogs Common Gate Output Conductance 250 250 250 µS Cgd Drain-Gate Capacitance 2.5 2.5 2.5 pF VGS = -10V, VDS = 10V f = 1MHz (Note 2) Cgs Gate-Source Capacitance 5.0 5.0 5.0 en Equivalent Short Circuit Input Noise Voltage 10 10 10 nV √ Hz VDS = 10V, ID = 10mA f = 100Hz (Note 2) |
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