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SD211 bảng dữ liệu(PDF) 2 Page - Calogic, LLC

tên linh kiện SD211
Giải thích chi tiết về linh kiện  High-Speed Analo N-Channel DMOS FETs
PDF  2 Pages
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nhà sản xuất  CALOGIC [Calogic, LLC]
Trang chủ  http://www.calogic.net
Logo CALOGIC - Calogic, LLC

SD211 bảng dữ liệu(HTML) 2 Page - Calogic, LLC

  SD211 Datasheet HTML 1Page - Calogic, LLC SD211 Datasheet HTML 2Page - Calogic, LLC  
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ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
oC Case Temperature . . . 1.2W
Storage Temperatue Range . . . . . . . . . . . . . -65
oC to +200oC
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
oC
Operating Temperature Range . . . . . . . . . . . -55
oC to +125oC
SD211 / SD213 / SD215
CORPORATION
DC CHARACTERISTICS (TA = 25
oC, unless otherwise specified)
SYMBOL
PARAMETER
SD211
SD213
SD215
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BVDS
Drain-to-Source
30
35
V
VGS = VBS = 0V, ID = 10
µA
10
25
10
25
20
25
VGS = VBS = -5V, IS = 10nA
BVSD
Source-to Drain
10
10
20
VGD = VBD = -5V, ID = 10nA
BVDB
Drain-to-Body
15
15
25
VGB = 0V, source OPEN, ID = 10nA
BVSB
Source-to-Body
15
15
25
VGB = 0V, drain OPEN, IS = 10
µA
LEAKAGE CURRENT
IDS (OFF)
Drain-to-Source
110
1
10
nA
VGS = VBS = -5V, VDS = +10V
110
VGS = VBS = -5V, VDS = +20V
ISD (OFF)
Source-to-Drain
110
1
10
VGS = VBD = -5V, VSD = +10V
110
VGS = VBD = -5V, VSD = +20V
IGBS
Gate
10
10
10
VDB = VSB = 0V, VGS =
±40V
VT
Threshold Voltage
0.5
1.0
2.0
0.1
1.0
2.0
0.1
1.0
2.0
V
VDS = VGS = VT, IS = 1
µA, VSB = 0V
rDS (ON)
Drain-to-Source
Resistance
50
70
50
70
50
70
Ω
ID = 1.0mA, VSB = 0, VGS = +5V
30
45
30
45
30
45
ID = 1.0mA, VSB = 0, VGS = +10V
23
23
23
ID = 1.0mA, VSB = 0, VGS = +15V
19
19
19
ID = 1.0mA, VSB = 0, VGS = +20V
17
ID = 1.0mA, VSB = 0, VGS = +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
SD211
SD213
SD215
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs
Forward
Transconductance
10
15
10
15
10
15
ms
VDS = 10V, VSB = 0V,
ID = 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
CISS
Gate Node
2.4
3.5
2.4
3.5
2.4
3.5
pF
VDS = 10V, f = 1MHz
VGS = VBS = -15V
COSS
Drain Node
1.3
1.5
1.3
1.5
1.3
1.5
CRSS
Source Node
0.3
0.5
0.3
0.5
0.3
0.5
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
PARAMETER
SD211
SD212
SD215
UNIT
VDS
Drain-to-Source
+30
+10
+20
Vdc
VSD
Source-to-Drain
+10
+10
+20
Vdc
VDB
Drain-to-Body
+30
+15
+25
Vdc
VSB
Source-to-Body
+15
+15
+25
Vdc
VGS
Gate-to-Source
-15
+25
-15
+25
-25
+30
Vdc
VGB
Gate-to-Body
-0.3
+25
-0.3
+25
-0.3
+30
Vdc
VGD
Gate-to-Drain
-30
+25
-15
+25
-25
+30
Vdc



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