ABSOLUTE MAXIMUM RATINGS

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Total Device Dissipation at 25

Storage Temperatue Range . . . . . . . . . . . . . -65

Lead Temperature (1/16" from case for 10 sec.). . . . . . 300

Operating Temperature Range . . . . . . . . . . . -55

SD210 / SD212 / SD214

CORPORATION

PARAMETER

SD210

SD212

SD214

UNIT

Drain-to-Source

+30

+10

+20

Source-to-Drain

+10

+10

+20

Drain-to-Body

+30

+15

+25

Source-to-Body

+15

+15

+25

Gate-to-Source

±40

±40

±40

Gate-to-Body

±40

±40

±40

Gate-to-Drain

±40

±40

±40

SYMBOL

PARAMETER

SD210

SD212

SD214

UNITS

TEST CONDITIONS

MIN TYP MAX MIN TYP MAX MIN TYP MAX

BREAKDOWN VOLTAGE

Drain-to-Source

30

35

V

µA

10

25

10

25

20

25

Source-to Drain

10

10

20

Drain-to-Body

15

15

25

Source-to-Body

15

15

25

µA

LEAKAGE CURRENT

Drain-to-Source

110

1

10

nA

110

Source-to-Drain

110

1

10

110

Gate

0.1

0.1

0.1

±40V

Threshold Voltage

0.5

1.0

2.0

0.1

1.0

2.0

0.1

1.0

2.0

V

Drain-to-Source

Resistance

50

70

50

70

50

70

Ω

30

45

30

45

30

45

23

23

23

19

19

19

17

17

17

AC ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

SD210

SD212

SD214

UNITS

TEST CONDITIONS

MIN TYP MAX MIN TYP MAX MIN TYP MAX

gfs

Forward

Transconductance

10

15

10

15

10

15

ms

SMALL SIGNAL CAPACITANCES

Gate Node

2.4

3.5

2.4

3.5

2.4

3.5

pF

Drain Node

1.3

1.5

1.3

1.5

1.3

1.5

Source Node

3.5

5.5

3.5

5.5

3.5

5.5

Reverse Transfer

0.3

0.5

0.3

0.5

0.3

0.5

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