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L6743D bảng dữ liệu(PDF) 10 Page - STMicroelectronics |
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L6743D bảng dữ liệu(HTML) 10 Page - STMicroelectronics |
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10 / 16 page ![]() Device description and operation L6743D 10/16 To prevent bootstrap capacitor to extra-charge as a consequence of large negative spikes, an external series resistance RBOOT (in the range of few ohms) may be required in series to BOOT pin. Bootstrap capacitor needs to be designed in order to show a negligible discharge due to the high-side MOSFET turn-on. In fact it must give a stable voltage supply to the high-side driver during the MOSFET turn-on also minimizing the power dissipated by the embedded Boot Diode. Figure 5 gives some guidelines on how to select the capacitance value for the bootstrap according to the desired discharge and depending on the selected MOSFET. Figure 5. Bootstrap capacitance design 4.4 Power dissipation L6743D embeds high current drivers for both high-side and low-side MOSFETs: it is then important to consider the power that the device is going to dissipate in driving them in order to avoid overcoming the maximum junction operative temperature. Two main terms contribute in the device power dissipation: bias power and drivers' power. ● Device power (PDC) depends on the static consumption of the device through the supply pins and it is simply quantifiable as follow: ● Drivers' power is the power needed by the driver to continuously switch ON and OFF the external MOSFETs; it is a function of the switching frequency and total gate charge of the selected MOSFETs. It can be quantified considering that the total power PSW dissipated to switch the MOSFETs dissipated by three main factors: external gate resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. This last term is the important one to be determined to calculate the device power dissipation. The total power dissipated to switch the MOSFETs results: When designing an application based on L6743D it is recommended to take into consideration the effect of external gate resistors on the power dissipated by the driver. External gate resistors helps the device to dissipate the switching power since the same power PSW will be shared between the internal driver impedance and the external resistor resulting in a general cooling of the device. 0.0 0.5 1.0 1.5 2.0 2.5 0 10203040 506070 8090 100 High-Side MOSFET Gate Charge [nC] Cboot = 47nF Cboot = 100nF Cboot = 220nF Cboot = 330nF Cboot = 470nF 0 500 1000 1500 2000 2500 0.0 0.2 0.4 0.6 0.8 1.0 Boot Cap Delta Voltage [V] Qg = 10nC Qg = 25nC Qg = 50nC Qg = 100nC P DC V CC I CC V PVCC I PVCC ⋅ + ⋅ = P SW F SW Q GHS PVCC ⋅ Q GLS VCC ⋅ + () ⋅ = |
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