3N166 datasheet(1/2 Pages) CALOGIC

tên linh kiện	3N166

Giải thích chi tiết về linh kiện	Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

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Monolithic Dual P-Channel

Enhancement Mode MOSFET

General Purpose Amplifier

3N165 / 3N166

FEATURES

•• Very High Impedance

•• High Gate Breakdown

•• Low Capacitance

ABSOLUTE MAXIMUM RATINGS (Note 1)

(TA = 25

oC unless otherwise specified)

Drain-Source or Drain-Gate Voltage (Note 2)

3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . .

±125

Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±80V

Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Storage Temperature . . . . . . . . . . . . . . . . . . . -65

oC to +200oC

Operating Temperature . . . . . . . . . . . . . . . . . -55

oC to +150oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300

oC

Power Dissipation

One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW

Total Derating above 25

oC. . . . . . . . . . . . . . . . . . 4.2mW/oC

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

ORDERING INFORMATION

Part

Package

Temperature Range

3N165-66

Hermetic TO-99

-55

oC to +150oC

X3N165-66

Sorted Chips in Carriers

-55

oC to +150oC

CORPORATION

G1

D2

D1

G2

C

TO-99

S

2506

PIN CONFIGURATION

DEVICE SCHEMATIC

5

1

3

4

8

7

0190

ELECTRICAL CHARACTERISTICS (TA = 25

oC and VBS = 0 unless otherwise specified)

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

IGSSR

Gate Reverse Leakage Current

10

pA

VGS = 40V

IGSSF

Gate Forward Leakage Current

-10

VGS = -40V

-25

TA = +125

oC

IDSS

Drain to Source Leakage Current

-200

VDS = -20V

ISDS

Source to Drain Leakage Current

-400

VSD = -20V, VDB = 0

ID(on)

On Drain Current

-5

-30

mA

VDS = -15V, VGS = -10V

VGS(th)

Gate Source Threshold Voltage

-2

-5

V

VDS = -15V, ID = -10

µA

VGS(th)

Gate Source Threshold Voltage

-2

-5

VDS = VGS, ID = -10

µA

rDS(on)

Drain Source ON Resistance

300

ohms

VGS = -20V, ID = -100

µA

BOTTOM VIEW

S

C

0180

D

2

G

2

G

1

D

1

Số phần tương tự - 3N166

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Linear Integrated Syste...	3N166	19Kb / 2P	MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Intersil Corporation	3N166	4Mb / 122P	P-CHANNEL JFET
New Jersey Semi-Conduct...	3N166	123Kb / 1P	(SINGLE, DUAL) MOS FET P-CHANNEL, ENHANCEMENT
Micross Components	3N166	365Kb / 1P	a monolithic dual enhancement mode P-Channel Mosfet
Calogic, LLC	3N166	37Kb / 2P	Monolithic Dual P-Channel

More results

Mô tả tương tự - 3N166

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Calogic, LLC	3N190	27Kb / 2P	Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
Calogic, LLC	IT1700	21Kb / 2P	P-Channel Enhancement Mode MOSFET General Purpose Amplifier
Linear Integrated Syste...	3N165-6	19Kb / 2P	MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Calogic, LLC	3N163	28Kb / 2P	P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
Micross Components	3N165_TO-78	366Kb / 1P	a monolithic dual enhancement mode P-Channel Mosfet
	3N166_TO-78	365Kb / 1P	a monolithic dual enhancement mode P-Channel Mosfet
	3N190_TO-78	295Kb / 1P	a monolithic dual enhancement mode P-Channel Mosfet
	3N165	366Kb / 1P	a monolithic dual enhancement mode P-Channel Mosfet
	3N166	365Kb / 1P	a monolithic dual enhancement mode P-Channel Mosfet
	LS3N191	295Kb / 1P	a monolithic dual enhancement mode P-Channel Mosfet

More results

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