CSD19536KCS datasheet(1/10 Pages) TI1

tên linh kiện	CSD19536KCS

Giải thích chi tiết về linh kiện	CSD19536KCS, 100 V N-Channel NexFET Power MOSFET

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nhà sản xuất	TI1 [Texas Instruments]

Trang chủ	http://www.ti.com

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VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 100A

TC = 125°C,I D = 100A

G001

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90 100 110 120

Qg - Gate Charge (nC)

ID = 100A

VDS = 50V

G001

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

CSD19536KCS

www.ti.com

SLPS485 – JANUARY 2014

CSD19536KCS, 100 V N-Channel NexFET™ Power MOSFET

Check for Samples: CSD19536KCS

1

FEATURES

2

•

Ultra-Low Qg and Qgd

PRODUCT SUMMARY

•

Low Thermal Resistance

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

•

Avalanche Rated

Qg

Gate Charge Total (10 V)

118

nC

•

Pb-Free Terminal Plating

Qgd

Gate Charge Gate to Drain

17

nC

•

RoHS Compliant

VGS = 6 V

2.5

m

Ω

RDS(on)

Drain-to-Source On Resistance

•

Halogen Free

VGS = 10 V

2.3

m

Ω

•

TO-220 Plastic Package

VGS(th)

Threshold Voltage

2.5

V

APPLICATIONS

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

•

Secondary Side Synchronous Rectifier

TO-220 Plastic

•

Motor Control

CSD19536KCS

Tube

50

Tube

Package

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

This 100 V, 2.3 m

Ω, TO-220 NexFET™ power

TA = 25°C

VALUE

UNIT

MOSFET is designed to minimize losses in power

VDS

Drain-to-Source Voltage

100

V

conversion applications.

VGS

Gate-to-Source Voltage

±20

V

Continuous Drain Current (Package limited)

150

Pin Out Drawing

Continuous Drain Current (Silicon limited),

259

ID

TC = 25°C

A

Continuous Drain Current (Silicon limited),

183

TC = 100°C

IDM

Pulsed Drain Current (1)

224

A

PD

Power Dissipation

375

W

TJ,

Operating Junction and Storage

–55 to 175

°C

TSTG

Temperature Range

Avalanche Energy, single pulse

EAS

806

mJ

ID = 127 A, L = 0.1 mH, RG = 25 Ω

(1) Pulse duration

≤ 300 μs, Duty cycle ≤ 1%

RDS(on) vs VGS

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Số phần tương tự - CSD19536KCS

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	CSD19536KCS	321Kb / 2P	isc N-Channel MOSFET Transistor
Texas Instruments	CSD19536KCS	991Kb / 13P	CSD19536KCS 100V N-Channel NexFET™ Power MOSFET REVISED MAY 2024
Texas Instruments	CSD19536KCS.B	991Kb / 13P	CSD19536KCS 100V N-Channel NexFET™ Power MOSFET REVISED MAY 2024

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