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QJS0512001 bảng dữ liệu(PDF) 2 Page - Powerex Power Semiconductors

tên linh kiện QJS0512001
Giải thích chi tiết về linh kiện  Single MOSFET Module 120 Amperes/500 Volts
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nhà sản xuất  POWEREX [Powerex Power Semiconductors]
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QJS0512001 bảng dữ liệu(HTML) 2 Page - Powerex Power Semiconductors

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QJS0512001
Single MOSFET Module
120 Amperes/500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
2
01/10 Rev. 1
Maximum Ratings,
Tj = 25°C unless otherwise specified
Ratings
Symbol
QJS0512001
Units
Drain-Source Voltage
VDS
500
Volts
Drain-Gate Voltage
VDGR
500
Volts
Gate-Source Voltage
VGS
±30
Volts
Drain Current (Continuous) at TC = 25°C
ID
120
Amperes
Drain Current (Continuous) at TC = 100°C
ID
75
Amperes
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Mounting Torque, M6 Terminal Screws
—
26
in-lb
Mounting Torque, M6 Mounting Screws
—
26
in-lb
Module Weight (Typical)
—
220
Grams
V Isolation Voltage
VRMS
2500
Volts
Static Electrical Characteristics,
Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
V(BR)DSS
ID = 500μA, VGS = 0
500
—
—
Volts
Zero Gate Voltage Drain Current
IDSS
VGS = 0, VDS = 500V
—
—
20
μA
Zero Gate Voltage Drain Current
IDSS
VGS = 0, VDS = 500V, TC = 125°C
—
—
200
μA
Gate Leakage Current
IGSS
VDS = 0, VGS = ±20V
—
—
±20
μA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 500µA
3.0
4.0
5.0
Volts
Drain-Source On Resistance
RDS(on)
ID = 60A, VGS = 10V
—
0.022
0.025
Ω
Total Gate Charge
QG
VDD = 400V, ID = 120A, VGS = 10V
—
380
530
nC
Forward On Voltage Source-Drain Diode
VSD
ISD = 120A, VGS = 0
—
—
1.5
Volts
Thermal and Mechanical Characteristics,
Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)
MOSFET
—
0.1
TBD
°C/W
Contact Thermal Resistance,
Rth(c-f)
Module
—
—
0.075
°C/W
Thermal Grease Applied



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