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OPA690 bảng dữ liệu(PDF) 4 Page - Texas Instruments

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tên linh kiện OPA690
Giải thích chi tiết về linh kiện  Triple, Wideband, Fixed Gain Video BUFFER AMPLIFIER With Disable
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Trang chủ  http://www.ti.com
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OPA690 bảng dữ liệu(HTML) 4 Page - Texas Instruments

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OPA3692
SBOS228E
4
www.ti.com
OPA3692ID, OPA3692IDBQ
TYP
MIN/MAX OVER TEMPERATURE(1)
0
°C to
–40
°C to
MIN/
TEST
PARAMETER
CONDITIONS
+25
°C
+25
°C70°C
+85
°C
UNITS
MAX
LEVEL(2 )
AC PERFORMANCE (see Figure 2)
Small-Signal Bandwidth (VO < 0.5VPP)
G = +1
240
MHz
typ
C
G = +2
190
168
160
140
MHz
min
B
G = –1
195
MHz
typ
C
Bandwidth for 0.1dB Gain Flatness
G = +2, VO < 0.5VPP
90
40
30
25
MHz
min
B
Peaking at a Gain of +1
VO < 0.5VPP
0.2
1
2.5
3
dB
max
B
Large-Signal Bandwidth
G = +2, VO = 2VPP
210
MHz
typ
C
Slew Rate
G = +2, 2V Step
830
600
575
550
V/
µsmin
B
Rise-and-Fall Time
G = +2, VO = 0.5V Step
2.0
ns
typ
C
G = +2, VO = 2V Step
2.3
ns
typ
C
Settling Time to 0.02%
G = +2, VO = 2V Step
14
ns
typ
C
0.1%
G = +2, VO = 2V Step
10
ns
typ
C
Harmonic Distortion
G = +2, f = 5MHz, VO = 2VPP
2nd-Harmonic
RL = 100Ω to VS/2
–66
–58
–57
–56
dBc
max
B
RL ≥ 500Ω to VS/2
–73
–65
–63
–62
dBc
max
B
3rd-Harmonic
RL = 100Ω to VS/2
–72
–68
–67
–65
dBc
max
B
RL ≥ 500Ω to VS /2
–77
–72
–70
–69
dBc
max
B
Input Voltage Noise
f > 1MHz
1.7
2.5
2.9
3.1
nV/
√Hz
max
B
Noninverting Input Current Noise
f > 1MHz
12
14
15
15
pA/
√Hz
max
B
Inverting Input Current Noise
f > 1MHz
15
17
18
19
pA/
√Hz
max
B
DC PERFORMANCE(3)
Gain Error
G = +1
±0.2
%
typ
C
G = +2
±0.3
±1.5
±1.6
±1.7
%
max
A
G = –1
±0.2
±1.5
±1.6
±1.7
%
max
B
Internal RF and RG
Minimum
402
457
462
464
Ω
min
B
Maximum
402
347
342
340
Ω
max
B
Average Drift
0.13
0.13
0.13
%/
°Cmax
B
Input Offset Voltage
VCM = 2.5V
±0.8
±3.5
±4.1
±4.8
mV
max
A
Average Offset Voltage Drift
VCM = 2.5V
±12
±20
µV/°Cmax
B
Noninverting Input Bias Current
VCM = 2.5V
+20
+40
+46
+56
µAmax
A
Average Noninverting Input Bias Current Drift
VCM = 2.5V
–250
–250
nA/
°Cmax
B
Inverting Input Bias Current
VCM = 2.5V
±5
±20
±25
±35
µAmax
A
Average Inverting Input Bias Current Drift
VCM = 2.5V
±112
±200
nA
°Cmax
B
INPUT
Least Positive Input Voltage
1.5
1.6
1.7
1.8
V
max
B
Most Positive Input Voltage
3.5
3.4
3.3
3.2
V
min
B
Noninverting Input Impedance
100 || 2
k
Ω || pF
typ
C
OUTPUT
Most Positive Output Voltage
No Load
4.0
3.8
3.7
3.5
V
min
A
RL = 100Ω
3.9
3.7
3.6
3.4
V
min
A
Least Positive Output Voltage
No Load
1.0
1.2
1.3
1.5
V
max
A
RL = 100Ω
1.1
1.3
1.4
1.6
V
max
A
Current Output, Sourcing
+160
+120
+100
+80
mA
min
A
Sinking
–160
–120
–100
–80
mA
min
A
Short-Circuit Current
±250
mA
typ
C
Output Impedance
G = +2, f = 100kHz
0.12
Ω
typ
C
DISABLE/POWER DOWN (DIS Pin)
Power-Down Supply Current (+VS)VDIS = 0, All Channels
–450
–900
–1050
–1200
µAmax
A
Off Isolation
G = +2, 5MHz
65
dB
typ
C
Output Capacitance in Disable
4
pF
typ
C
Turn-On Glitch
G = +2, RL = 150Ω, VIN = 2.5V
±50
mV
typ
B
Turn-Off Glitch
G = +2, RL = 150Ω, VIN = 2.5V
±20
mV
typ
B
Enable Voltage
3.3
3.5
3.6
3.7
V
min
A
Disable Voltage
1.8
1.7
1.6
1.5
V
max
A
Control Pin Input Bias Current (DIS)
VDIS = 0, Each Channel
75
130
150
160
µA
typ
C
POWER SUPPLY
Specified Single-Supply Operating Voltage
5
V
typ
C
Maximum Single-Supply Operating Voltage
12
12
12
V
max
A
Maximum Quiescent Current (3 Channels)
VS = +5V
13.5
14.4
15.3
15.9
mA
max
A
Minimum Quiescent Current (3 Channels)
VS = +5V
13.5
12.3
11.4
11.0
mA
min
A
Power-Supply Rejection Ratio (+PSRR)
Input Referred
62
dB
typ
C
TEMPERATURE RANGE
Specification: D, DBQ
–40 to +85
°C
typ
C
Thermal Resistance,
θ
JA
D
SO-16
100
°C/W
typ
C
DBQ SSOP-16
100
°C/W
typ
C
NOTES: (1) Junction temperature = ambient temperature for low temperature limit and +25
°C specifications. Junction temperature = ambient temperature +15°C at
high temperature limit specifications. (2) Test Levels: (A) 100% tested at +25
°C. Over-temperature limits by characterization and simulation. (B) Limits set by
characterization and simulation. (C) Typical value only for information. (3) Current is considered positive out-of-node. VCM is the input common-mode voltage.
ELECTRICAL CHARACTERISTICS: VS = +5V
Boldface limits are tested at +25
°C.
G = +2 (–IN grounded though 0.1
µF) and R
L = 100Ω to VS /2 (see Figure 2 for AC performance only), unless otherwise noted.



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