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AD845 bảng dữ liệu(PDF) 3 Page - Analog Devices

tên linh kiện AD845
Giải thích chi tiết về linh kiện  Precision, 16 MHz CBFET Op Amp
PDF  12 Pages
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Trang chủ  http://www.analog.com
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AD845 bảng dữ liệu(HTML) 3 Page - Analog Devices

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AD845
REV. E
–3–
ORDERING GUIDE
Temperature
Package
Package
Model
Range
Description
Option
1
AD845JN
0
∞C to 70∞C
8-Lead PDIP
N-8
AD845KN
0
∞C to 70∞C
8-Lead PDIP
N-8
AD845JR-16
0
∞C to 70∞C
16-Lead SOIC
R-16
AD845JR-16-REEL
0
∞C to 70∞CTape and Reel
R-16
AD845JR-16-REEL7
0
∞C to 70∞CTape and Reel
R-16
AD845AQ
–40
∞C to +85∞C
8-Lead CERDIP
Q-8
AD845BQ
–40
∞C to +85∞C
8-Lead CERDIP
Q-8
AD845SQ
–55
∞C to +125∞C
8-Lead CERDIP
Q-8
AD845SQ/883B
–55
∞C to +125∞C
8-Lead CERDIP
Q-8
5962-8964501PA
2
–55
∞C to +125∞C
8-Lead CERDIP
Q-8
AD845JCHIPS
0
∞C to 70∞CDie
NOTES
1N = Plastic DIP; Q = CERDIP; R = Small Outline IC (SOIC).
2See military data sheet.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Internal Power Dissipation
2
Plastic Mini-DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.6 W
CERDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.4 W
16-Lead SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.5 W
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +VS
Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Differential Input Voltage . . . . . . . . . . . . . . . . . . +VS and –VS
Storage Temperature Range
Q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65
∞C to +150∞C
N, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65
∞C to +125∞C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300
∞C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only, and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Mini-DIP package:
qJA = 100∞C/W; CERDIP package: qJA = 110∞C/W; SOIC
package:
qJA = 100∞C/W.
METALIZATION PHOTOGRAPH
Dimensions shown in inches and (mm).
Contact factory for latest dimensions.
SUBSTRATE CONNECTED TO +V
S



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