CAT28C64B datasheet(3/13 Pages) ONSEMI

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CAT28C64B

Doc. No. MD-1011, Rev. I

Characteristics subject to change without notice

ABSOLUTE MAXIMUM RATINGS*

Temperature Under Bias ................. –55

°C to +125°C

Storage Temperature ....................... –65

°C to +150°C

Voltage on Any Pin with

Respect to Ground(2) ........... –2.0V to +VCC + 2.0V

VCC with Respect to Ground ............... –2.0V to +7.0V

Package Power Dissipation

Capability (Ta = 25

°C)................................... 1.0W

Lead Soldering Temperature (10 secs) ............ 300

°C

Output Short Circuit Current(3) ........................ 100 mA

*COMMENT

Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device.

These are stress ratings only, and functional operation

of the device at these or any other conditions outside of

those listed in the operational sections of this specifica-

tion is not implied. Exposure to any absolute maximum

rating for extended periods may affect device perfor-

mance and reliability.

RELIABILITY CHARACTERISTICS

Symbol

Parameter

Min.

Max.

Units

Test Method

NEND(1)

Endurance

105

Cycles/Byte

MIL-STD-883, Test Method 1033

TDR(1)

Data Retention

100

Years

MIL-STD-883, Test Method 1008

VZAP(1)

ESD Susceptibility

2000

Volts

MIL-STD-883, Test Method 3015

ILTH(1)(4)

Latch-Up

100

JEDEC Standard 17

Note:

(1) This parameter is tested initially and after a design or process change that affects the parameter.

(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC

voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.

(3) Output shorted for no more than one second. No more than one output shorted at a time.

(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC +1V.

MODE SELECTION

Mode

I/O

Power

Read

DOUT

ACTIVE

Byte Write (WE Controlled)

DIN

ACTIVE

Byte Write (CE Controlled)

DIN

ACTIVE

Standby, and Write Inhibit

High-Z

STANDBY

Read and Write Inhibit

High-Z

ACTIVE

CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V

Symbol

Test

Max.

Units

Conditions

CI/O(1)

Input/Output Capacitance

VI/O = 0V

CIN(1)

Input Capacitance

VIN = 0V

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