BFQ591 datasheet(2/11 Pages) PHILIPS

2 / 11 page

NXP Semiconductors

Product speciﬁcation

NPN 7 GHz wideband transistor

BFQ591

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

APPLICATIONS

Intended for applications in the GHz range such as MATV

or CATV amplifiers and RF communications subscribers

equipment.

DESCRIPTION

NPN wideband transistor in a SOT89 plastic package.

MARKING

PINNING

TYPE NUMBER

MARKING CODE

BFQ591

BCp

DESCRIPTION

emitter

collector

base

321

Fig.1 Simplified outline (SOT89).

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−

VCEO

collector-emitter voltage

open base

−−

collector current (DC)

−−

200

Ptot

total power dissipation

Ts ≤ 90 °C; note 1

−−

2.25

hFE

DC current gain

IC = 70 mA; VCE = 8 V

6090250

Cre

feedback capacitance

IC = 0; VCB = 12 V; f = 1 MHz

−

0.8

−

transition frequency

IC = 70 mA; VCE =12V;

f = 1 GHz

−

GHz

GUM

maximum unilateral power gain

IC = 70 mA; VCE =12V;

f = 900 MHz; Tamb =25 °C

−

21|

insertion power gain

IC = 70 mA; VCE =12V;

f = 900 MHz; Tamb =25 °C

−

Rev. 04 - 2 October 2007

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