BC856 datasheet(6/10 Pages) NXP

6 / 10 page

2004 Jan 16

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BC856; BC857; BC858

handbook, halfpage

400

600

800

1000

hFE

200

MGT715

−10−2

−10−1

−1

−10

−102

−103

IC (mA)

(1)

(2)

(3)

Fig.6

DC current gain as a function of collector

current; typical values.

BC857B; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT716

−10−2

−10−1

−1

−10

−102

−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.7

Base-emitter voltage as a function of

collector current; typical values.

BC857B; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MGT717

−10−1

−1

−10

−102

−103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.8

Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857B; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT718

−10−1

−1

−10

−102

−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.9

Base-emitter saturation voltage as a

function of collector current; typical values.

BC857B; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

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