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STM32F217VG bảng dữ liệu(PDF) 84 Page - STMicroelectronics

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Electrical characteristics
STM32F21xxx
84/173
Doc ID 17050 Rev 8
5.3.9
Internal clock source characteristics
The parameters given in Table 29 and Table 30 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 11.
High-speed internal (HSI) RC oscillator
Figure 31.
ACCHSI versus temperature
Table 29.
HSI oscillator characteristics (1)
1.
VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
16
-
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2.
Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the
ST website www.st.com.
--
1
%
Factory-
calibrated
TA = –40 to 105 °C
–8
-
4.5
%
TA = –10 to 85 °C
–4
-
4
%
TA = 25 °C
–1
-
1
%
tsu(HSI)
(3)
3.
Guaranteed by design, not tested in production.
HSI oscillator
startup time
-2.2
4
µs
IDD(HSI)
HSI oscillator
power consumption
-60
80
µA
MS19012V2
-8
-6
-4
-2
0
2
4
6
-45
-35
-25
-15
-5
5
15
25
35
45
55
65
75
85
95
105 115 125
Temperature (°C)
max
avg
min



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