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STM32F103CB bảng dữ liệu(PDF) 55 Page - STMicroelectronics

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STM32F103CB bảng dữ liệu(HTML) 55 Page - STMicroelectronics

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STM32F103x8, STM32F103xB
Electrical characteristics
104
Figure 25. Typical application with a 32.768 kHz crystal
5.3.7
Internal clock source characteristics
The parameters given in Table 24 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 9.
High-speed internal (HSI) RC oscillator
ai14146
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F103xx
32.768 kH z
resonator
CL2
Resonator with
integrated capacitors
Bias
controlled
gain
Table 24. HSI oscillator characteristics(1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
8
-
MHz
DuCy(HSI) Duty cycle
45
-
55
%
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
--
1(3)
3. Guaranteed by design, not tested in production.
Factory-
calibrated
(4)(5)
4. Based on characterization, not tested in production.
5. The actual frequency of HSI oscillator may be impacted by a reflow, but does not drift out of the specified
range.
TA = –40 to 105 °C
–2
-
2.5
TA = –10 to 85 °C
–1.5
-
2.2
TA = 0 to 70 °C
–1.3
-
2
TA = 25 °C
–1.1
-
1.8
tsu(HSI)(4)
HSI oscillator
startup time
1-2
µs
IDD(HSI)(4)
HSI oscillator power
consumption
-
80
100
µA



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