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STM8L151C8 bảng dữ liệu(PDF) 91 Page - STMicroelectronics

tên linh kiện STM8L151C8
Giải thích chi tiết về linh kiện  8-bit ultralow power MCU, up to 64 KB Flash 2 KB data EEPROM, RTC, LCD, timers, USARTs, I2C, SPIs, ADC, DAC, comparators
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STM8L151C8 bảng dữ liệu(HTML) 91 Page - STMicroelectronics

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STM8L15xx8, STM8L15xR6
Electrical parameters
121
Figure 22. LSE oscillator circuit diagram
Internal clock sources
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
In the following table, data are based on characterization results, not tested in production,
unless otherwise specified.
4.
tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation.
This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
OSC_OUT
OSC_IN
fLSE
CL1
CL2
RF
STM8
Resonator
Consumption
control
gm
Rm
Cm
Lm
CO
Resonator
MS32624V1
Table 33. HSI oscillator characteristics
Symbol
Parameter
Conditions(1)
Min.
Typ.
Max.
Unit
fHSI
Frequency
VDD = 3.0 V
16
MHz
ACCHSI
Accuracy of HSI
oscillator (factory
calibrated)
VDD = 3.0 V, TA = 25 °C
-1 (2)
1 (2)
%
VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C
-1.5
1.5
%
VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C
-2
2
%
VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C
-2.5
2
%
VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C
-4.5
2
%
1.65 V
≤VDD ≤ 3.6 V,
-40 °C
≤TA ≤ 125 °C
-4.5
3
%
TRIM
HSI user trimming
step(3)
Trimming code
≠ multiple of 16
0.4
0.7
%
Trimming code = multiple of 16
± 1.5
%
tsu(HSI)
HSI oscillator setup
time (wakeup time)
3.7
6 (4)
µs
IDD(HSI)
HSI oscillator power
consumption
100
140(4)
µA
1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
2. Tested in production.



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