BTB12 datasheet(5/12 Pages) STMICROELECTRONICS

5 / 12 page

BTA12, BTB12, T12xx

Characteristics

5/12

Figure 7.

Non-repetitive surge peak on-state

current for a sinusoidal pulse with

width tp < 10 ms and corresponding

value of I2t

Figure 8.

Figure 8: Relative variation of gate

trigger current, holding current and

latching current versus junction

temperature (typical values)

0.01

0.10

1.00

10.00

100

1000

(A), I t (A s)

TSM

t (ms)

T initial=25°C

ITSM

dI/dt limitation:

50A/µs

I t

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

T (°C)

I,I ,I [T ] /

GT H L

,I ,I [T =25°C]

GT H L

IGT

IH & IL

Figure 9.

Relative variation of critical rate of

decrease of main current versus

(dV/dt)c (typical values)

(BW/CW/T1210/T1235)

Figure 10.

Relative variation of critical rate of

decrease of main current versus

(dV/dt)c (typical values) (TW)

0.1

1.0

10.0

100.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

T1210/SW

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

T1235/T1250/CW/BW

0.1

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.0

10.0

100.0

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

Figure 11.

Relative variation of critical rate of

decrease of main current versus

junction temperature

Figure 12.

D2PAK thermal resistance junction

to ambient versus copper surface

under tab (printed circuit board

FR4, copper thickness: 35 µm)

100

125

(dI/dt)c [T ] /

pecified]

(dI/dt)c [T s

T (°C)

1216

2428

3640

S(cm²)

(°C/W)

th(j-a)

DPAK

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