MTP60N06HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk ≥ 2.0) (3)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

—

71

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

10

100

µAdc

Gate–Body Leakage Current

(VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(Cpk ≥ 3.0) (3)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

—

3.0

7.0

4.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(Cpk ≥ 3.0) (3)

(VGS = 10 Vdc, ID = 30 Adc)

RDS(on)

—

0.011

0.014

Ohm

Drain–to–Source On–Voltage (VGS = 10 Vdc)

(ID = 60 Adc)

(ID = 30 Adc, TJ = 125°C)

VDS(on)

—

—

—

—

1.0

0.9

Vdc

Forward Transconductance

(VDS = 5.0 Vdc, ID = 30 Adc)

gFS

15

20

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

1950

2800

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

660

924

Transfer Capacitance

f = 1.0 MHz)

Crss

—

147

300

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(VDD = 30 Vdc, ID = 60 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

—

14

26

ns

Rise Time

(VDD = 30 Vdc, ID = 60 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

tr

—

197

394

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

—

50

102

Fall Time

RG = 9.1 Ω)

tf

—

124

246

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 60 Adc,

VGS = 10 Vdc)

QT

—

51

71

nC

(See Figure 8)

(VDS = 48 Vdc, ID = 60 Adc,

VGS = 10 Vdc)

Q1

—

12

—

(VDS = 48 Vdc, ID = 60 Adc,

VGS = 10 Vdc)

Q2

—

24

—

Q3

—

21

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 60 Adc, VGS = 0 Vdc)

(IS = 60 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.99

0.89

1.2

—

Vdc

Reverse Recovery Time

(See Figure 15)

(IS = 60 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

60

—

ns

(See Figure 15)

(IS = 60 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

36

—

(IS = 60 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

24

—

Reverse Recovery Stored Charge

QRR

—

0.143

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

LD

—

—

3.5

4.5

—

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

—

7.5

—

nH

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA