VTT3324LAH datasheet(1/3 Pages) ETC2

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Phototransistors

www.optoelectronics.perkinelmer.com

19

Description

Phototransistors are photodiode-amplifier combinations

integrated within a single silicon chip. These are combined to

overcome the major fault of photodiodes: unity gain. Many

applications demand a greater output signal from the photodetector

than can be generated by a photodiode alone. While the signal

from a photodiode can always be amplified through use of an

external op-amp or other circuitry, this approach is often not as

practical or as cost-effective as the use of phototransistors. The

phototransistor can be viewed as a photodiode whose output

photocurrent is fed into the base of a conventional small-signal

transistor. While not required for operation of the device as a

photodetector, a base connection is often provided, allowing the

designer the option of using base current to bias the transistor. The

typical gain of a phototransistor can range from 100 to over 1500.

Phototransistors can be used as ambient-light detectors. When

used with a controllable light source, typically an IRED, they

are often employed as the detector element for optoisolators and

transmissive or reflective optical switches.

All phototransistors are RoHS compliant.

Features

• Low-cost visible and near-IR

photodetection

• Available with gains from 100

to over 1500

• Moderately fast response times

• Available in a wide range of

packages including epoxy-coated,

transfer-molded, cast, hermetic

packages, chip form and surface

mounting technology

• Usable with almost any visible

or near-infrared light source such

as IREDs, neon, fluorescent,

incandescent bulbs, lasers, flame

sources, sunlight, etc.

• Same general electrical

characteristics as familiar signal

transistors

Typical Applications

• Computer/business equipment

• Write-protect control

• Margin controls—printers

• Industrial

• LED light source—light pens

• Security systems

• Safety shields

• Consumer

• Coin counters

• Lottery card readers

• Position sensors—joysticks

• Remote controllers—toys,

appliances, audio/visual

equipment

• Games—laser tag

• Camera shutter control

Principle of Operation

Phototransistors are solid-state light

detectors that possess internal gain.

They can be used to provide either

an analog or digital output signal.

Datasheets available upon request.

Absolute Maximum Ratings

Maximum Temperatures

-25°C to 80°C (CR10TE, CR50TE)

Storage and Operating:

-40°C to 100°C

-40°C to 110°C (VTT1015, VTT1016,

VTT1017, VTT1115, VTT1116, and VTT1117)

-40°C to 85°C (VTT7222, VTT7223,

VTT7225, VTT7122, VTT7123, and VTT7125)

-40°C to 70°C (VTT9002, VTT9003,

VTT9102, and VTT9103)

Continuous Power Dissipation: 50 mW

100 mW (VTT9002, VTT9003, VTT9102,

and VTT9103)

200 mW (CR10TE, CR50TE)

250 mW (VTT1015, VTT1016, VTT1017,

VTT1115, VTT1116, and VTT1117)

Derate above 30°C:

0.71 mW/˚C

2.5 mW/˚C (VTT9002, VTT9003, VTT9102,

and VTT9103)

3.12 mW/˚C (VTT1015, VTT1016, VTT1017,

VTT1115, VTT1116, and VTT1117)

0.91 mW/˚C (VTT7122, VTT7123, VTT7125)

Maximum Current:

25 mA

200 mA (VTT1015, VTT1016, VTT1017,

VTT1115, VTT1116, and VTT1117)

Lead-Soldering Temperature:

260°C (1.6 mm from case, 5 sec. max.)

phototransistors

Số phần tương tự - VTT3324LAH

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
PerkinElmer Optoelectro...	VTT3324LA	22Kb / 1P	.025 NPN Phototransistors

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NTE Electronics	NTE3032	19Kb / 2P	Phototransistor Detector NPN-Si, Visible & IR
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