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TLP700 bảng dữ liệu(PDF) 3 Page - Toshiba Semiconductor

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TLP700 bảng dữ liệu(HTML) 3 Page - Toshiba Semiconductor

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TLP700
2010-02-23
3
Electrical Characteristics (Ta = −40 to 100 °C, unless otherwise specified)
Characteristics
Symbol
Test
Circuit
Test Condition
Min
Typ.*
Max
Unit
Forward voltage
VF
⎯
IF = 10 mA, Ta = 25 °C
⎯
1.57
1.75
V
Temperature coefficient of forward
voltage
∆VF/∆Ta
⎯
IF = 10 mA
⎯
−1.8
⎯
mV/°C
Input reverse current
IR
⎯
VR = 5 V, Ta = 25 °C
⎯
⎯
10
μA
Input capacitance
CT
⎯
V
=0 V, f = 1 MHz, Ta = 25 °C
⎯
100
⎯
pF
IOPH1
V6-5 = 3.5 V
⎯
−1.4
−1.0
“H” Level
IOPH2
1
VCC = 15 V
IF = 5 mA
V6-5 = 7 V
⎯
⎯
−1.5
IOPL1
V5-4 = 2.5 V
1.0
1.4
⎯
Output current
(Note 9)
“L” Level
IOPL2
2
VCC = 15 V
IF = 0 mA
V5-4 = 7 V
1.5
⎯
⎯
A
“H” Level
VOH
3
VCC1=+15V, VEE1=-15V
RL = 200Ω, IF = 5 mA
11
13.7
⎯
Output voltage
“L” Level
VOL
4
VCC1=+15V, VEE1=-15V
RL = 200Ω,VF = 0.8 V
⎯
-14.9
-12.5
V
“H” Level
ICCH
5
IF = 10 mA
⎯
1.3
2.0
Supply current
“L” Level
ICCL
6
VCC = 30 V
VO=Open
IF = 0 mA
⎯
1.3
2.0
mA
Threshold input current
L
→ H
IFLH
⎯
VCC = 15 V, VO > 1 V
⎯
1.8
5
mA
Threshold input voltage
H
→ L
VFHL
⎯
VCC = 15 V, VO < 1 V
0.8
⎯
⎯
V
Supply voltage
VCC
⎯
⎯
15
⎯
30
V
VUVLO+
⎯
VO > 2.5V, IF = 5 mA
11.0
12.5
13.5
V
UVLO thresh hold
VUVLO-
⎯
VO < 2.5V, IF = 5 mA
9.5
11.0
12.0
V
UVLO hysteresis
UVLOHYS
⎯
⎯
⎯
1.5
⎯
V
( * ): All typical values are at Ta
= 25°C
Note 9: Duration of Io time ≤ 50
μs, 1 pulse
Note 10: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low
power consumption design.
It is therefore all the more necessary to observe general precautions regarding ESD when handling this
component.
Isolation Characteristics (Ta = 25 °C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Capacitance input to output
CS
Vs = 0 V , f = 1MHz
(Note 5)
⎯
1.0
⎯
pF
Isolation resistance
RS
R.H. ≤ 60 %, VS = 500 V
(Note 5)
1×10
12
10
14
⎯
Ω
AC, 1 minute
5000
⎯
⎯
AC, 1 second, in oil
⎯
10000
⎯
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
⎯
10000
⎯
Vdc



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