SSM3K16FV

2007-11-01

1

TOSHIBA Field Effect Transistor

Silicon N Channel MOS Type

SSM3K16FV

High Speed Switching Applications

Analog Switch Applications

• Suitable for high-density mounting due to compact package

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

20

V

Gate-Source voltage

±10

V

DC

100

Drain current

Pulse

200

mA

Drain power dissipation (Ta

= 25°C)

150

mW

Channel temperature

150

°C

Storage temperature

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Total rating, mounted on FR4 board (25.4 mm

× 25.4 mm × 1.6 t)

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

nit: mm

1

2

3

0.8±0.05

1.2±0.05

JEDEC

-

JEITA

-

TOSHIBA

2-1L1B

Weight: 0.0015 g (typ.)

D S

1

2

3

12

3

1.Gate

2.Source

3.Drain

VESM

0.5mm

0.45mm

0.45mm

0.4mm