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Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= I

25

33

S

Note 2

C

ies

3700

pF

C

oes

V

180

pF

C

res

44

pF

Q

g

155

nC

Q

ge

I

30

nC

Q

gc

51

nC

t

d(on)

46

ns

t

ri

57

ns

t

d(off)

270

500

ns

t

fi

50

100

ns

E

off

1.5

3.0 mJ

t

d(on)

48

ns

t

ri

42

ns

E

on

2.5

mJ

t

d(off)

300

ns

t

fi

70

ns

E

off

2.4

mJ

R

thJC

0.65 K/W

R

thCK

0.15

K/W

Inductive load, T

°°°°C

I

R

Note 3

Inductive load, T

°°°°C

I

R

Note 3

IXGR 32N170AH1

Notes: 1. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

2. Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

3. Switching times may increase for V

increased R

4. See DH60-18A and IXGH32N170A datasheets for additional

characteristics

ISOPLUS247 Outline

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

2.7

V

I

RM

I

A

t

rr

V

150

ns

R

thJC

1.5 K/W

See IXGX32N170AH1 for

charcteristic curves