MTP12N06EZL

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

—

0.06

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

10

100

µAdc

Gate–Source Breakdown Voltage

(VDS = 0 V, IG = 10 mA)

18

—

—

Vdc

Gate–Body Leakage Current

(VGS = ± 10 Vdc, VDS = 0 V, TJ = 25°C)

(VGS = ± 10 Vdc, VDS = 0 V, TJ = 150°C)

IGSS

—

—

—

—

500

100

nAdc

µAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

1.0

—

1.5

4.0

2.0

—

Vdc

mV/

°C

Static Drain–Source On–Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc)

RDS(on)

—

—

0.18

Ohm

Drain–Source On–Voltage (VGS = 5.0 Vdc)

(ID = 12 Adc)

(ID = 6.0 Adc, TJ = 125°C)

VDS(on)

—

—

—

—

2.6

2.3

Vdc

Forward Transconductance (VDS = 8.0 Vdc, ID = 6.0 Adc)

gFS

3.0

6.8

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

430

600

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

224

310

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

—

51

100

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(VDS = 30 Vdc, ID = 12 Adc,

VGS = 5.0 Vdc,

RG = 9.1 Ω)

td(on)

—

70

90

ns

Rise Time

(VDS = 30 Vdc, ID = 12 Adc,

VGS = 5.0 Vdc,

RG = 9.1 Ω)

tr

—

436

540

Turn–Off Delay Time

VGS = 5.0 Vdc,

RG = 9.1 Ω)

td(off)

—

158

380

Fall Time

G = 9.1 Ω)

tf

—

186

340

Gate Charge

(See Figures 8 & 9)

(VDS = 48 Vdc, ID = 12 Adc,

VGS = 5.0 Vdc)

QT

—

10.6

40

nC

(See Figures 8 & 9)

(VDS = 48 Vdc, ID = 12 Adc,

VGS = 5.0 Vdc)

Q1

—

1.4

—

(VDS = 48 Vdc, ID = 12 Adc,

VGS = 5.0 Vdc)

Q2

—

5.9

—

Q3

—

6.0

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 12 Adc, VGS = 0 Vdc)

(IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

1.1

1.05

1.4

—

Vdc

Reverse Recovery Time

(See Figure 14)

(IS = 12 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

325

—

ns

(See Figure 14)

(IS = 12 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

124

—

(IS = 12 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

201

—

Reverse Recovery Stored Charge

QRR

—

2.013

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

″ from package to center of die)

LD

—

4.5

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

—

7.5

—

nH

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.