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MPX4250D bảng dữ liệu(PDF) 4 Page - Freescale Semiconductor, Inc |
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MPX4250D bảng dữ liệu(HTML) 4 Page - Freescale Semiconductor, Inc |
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4 / 10 page ![]() Sensors 4 Freescale Semiconductor MPX4250D ON-CHIP TEMPERATURE COMPENSATION AND CALIBRATION Figure 2. Cross Sectional Diagram (not to scale) Figure 3. Recommended Power Supply Decoupling and Output Filtering (For additional output filtering, please refer to Application Note AN1535) Figure 4. Output versus Absolute Pressure Figure 2 illustrates the differential/gauge pressure sensing chip in the basic chip carrier (Case 867). A fluorosilicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the sensor diaphragm. The MPX4250D series pressure sensor operating characteristics and internal reliability and qualification tests are based on use of dry air as the pressure media. Media, other than dry air, may have adverse effects on sensor performance and long-term reliability. Contact the factory for information regarding media compatibility in your application. Figure 3 shows the recommended decoupling circuit for interfacing the output of the integrated sensor to the A/D input of a microprocessor or microcontroller. Figure 4 shows the sensor output signal relative to pressure input. Typical, minimum, and maximum output curves are shown for operation over a temperature range of 0° to 85°C using the decoupling circuit shown in Figure 3. The output will saturate outside of the specified pressure range. Stainless Steel Metal Cover Epoxy Case RTV Die Bond P2 Sealed Vacuum Reference Lead Frame Wire Bond Die P1 Fluoro Silicone Die Coat +5 V 1.0 µF 0.01 µF 470 pF GND Vs Vout IPS Output 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Pressure in kPa TYP MIN MAX Transfer Function: Vout = Vs* (0.00369*P + 0.04) ± Error VS = 5.1 Vdc Temperature = 0 to 85°C |
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