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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

Complementary TMOS

Field Effect Transistors

Micro8

™ devices are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density HDTMOS process to

achieve lowest possible on–resistance per silicon area. They are

capable of withstanding high energy in the avalanche and commuta-

tion modes and the drain–to–source diode has a very low reverse

recovery time. Micro8

™ devices are designed for use in low voltage,

high speed switching applications where power efficiency is important.

Typical applications are dc–dc converters, and power management in

portable and battery powered products such as computers, printers,

cellular and cordless phones. They can also be used for low voltage

motor controls in mass storage products such as disk drives and tape

drives. The avalanche energy is specified to eliminate the guesswork

in designs where inductive loads are switched and offer additional

safety margin against unexpected voltage transients.

• Miniature Micro8 Surface Mount Package — Saves Board Space

• Extremely Low Profile (<1.1mm) for thin applications such as

PCMCIA cards

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Mounting Information for Micro8 Package Provided

Negative sign for P–Channel devices omitted for clarity

Rating

Symbol

Max

Unit

Drain–to–Source Voltage

N–Channel

P–Channel

VDSS

20

20

V

Drain–to–Gate Voltage (RGS = 1.0 MW)

N–Channel

P–Channel

VDGR

20

20

V

Gate–to–Source Voltage — Continuous

N–Channel

P–Channel

VGS

±8.0

±8.0

V

Operating and Storage Temperature Range

TJ and Tstg

– 55 to 150

°C

DEVICE MARKING

CA

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MTDF1C02HD

13

″

12 mm embossed tape

4000 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier.

Order this document

by MTDF1C02HD/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

D

S

G

P–Channel

D

S

G

N–Channel

CASE 846A–02, Style 2

Micro8

MTDF1C02HD

COMPLEMENTARY

DUAL TMOS POWER FET

20 VOLTS

RDS(on) = 0.120 OHM

1.7 AMPERES

(N–CHANNEL)

RDS(on) = 0.175 OHM

1.6 AMPERES

(P–CHANNEL)

Motorola Preferred Device

™

Source 1

1

2

3

4

8

7

6

5

Top View

Gate 1

Source 2

Gate 2

Drain 1

Drain 1

Drain 2

Drain 2

56

4

3

78

2

1

Preferred devices are Motorola recommended choices for future use and best overall value.