Dual IGBT

HVIGBT Module

200 Amperes/3300 Volts

QID3320002

1

01/13 Rev. 8

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272

www.pwrx.com

Outline Drawing and Circuit Diagram

Dimensions

Inches

Millimeters

A

5.51

140.0

B

2.87

73.0

C

1.89

48.0

D

4.88±0.01

124.0±0.25

E

2.24±0.01

57.0±0.25

F

1.18

30.0

G

0.43

11.0

H

1.07

27.15

J

0.20

5.0

K

1.65

42.0

Description:

Powerex IGBT Modules are

designed for use in switching

applications. Each module consists

of two IGBT Transistors in a

half-bridge configuration with each

transistor having a reverse-

connected super-fast recovery

free-wheel diode. All components

and interconnects are isolated

from the heat sinking baseplate,

offering simplified system assembly

and thermal management.

Features:



Advanced Mitsubishi R-Series

Chip Technology





Creepage and Clearance

meet IEC 60077-1



High Isolation Voltage



Rugged SWSOA and RRSOA



Compact Industry Standard

Package

Applications:

Dimensions

Inches

Millimeters

L

0.69±0.01

17.5±0.25

M

0.38

9.75

N

0.20

5.0

P

0.22

5.5

Q

1.44

36.5

R

0.16

4.0

S

M6 Metric

M6

T

0.63 Min.

16.0 Min.

U

0.11 x 0.02

2.8 x 0.5

V

0.28 Dia.

7.0 Dia.

3

2

1

N

J (2TYP)

S NUTS

(3TYP)

H

H

V (4TYP)

M

G (3TYP)

R (DEEP)

E

B

K

(3TYP)

L

(2TYP)

P

U (5TYP)

T (SCREWING

DEPTH)

Q

1

2

3

4

5

6

7

8

F

F

D

A

C