TLE2082ACDR datasheet(44/79 Pages) TI1

44 / 79 page

TLE208x, TLE208xA, TLE208xY

EXCALIBUR HIGH-SPEED JFET-INPUT

OPERATIONAL AMPLIFIERS

SLOS182B – FEBRUARY 1997 – REVISED JUNE 2001

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

–

2 k

Ω

2 k

Ω

CL†

VCC +

–

10 k

Ω

CL†

100

Ω

VCC +

† Includes fixture capacitance

Figure 1. Slew-Rate Test Circuit

Figure 2. Unity-Gain Bandwidth

and Phase-Margin Test Circuit

† Includes fixture capacitance

–

2 k

Ω

VCC +

VCC –

Ground Shield

Picoammeters

Figure 3. Noise-Voltage Test Circuit

Figure 4. Input-Bias and Offset-

Current Test Circuit

–

VCC +

VCC –

IN –

IN +

Cic

Cid

Figure 5. Internal Input Capacitance

typical values

Typical values presented in this data sheet represent the median (50% point) of device parametric performance.

input bias and offset current

At the picoampere bias-current level typical of the TLE208x and TLE208xA, accurate measurement of the bias

becomes difficult. Not only does this measurement require a picoammeter, but test socket leakages can easily

exceed the actual device bias currents. To accurately measure these small currents, Texas Instruments uses

a two-step process. The socket leakage is measured using picoammeters with bias voltages applied but with

no device in the socket. The device is then inserted in the socket and a second test is performed that measures

both the socket leakage and the device input bias current. The two measurements are then subtracted

algebraically to determine the bias current of the device.

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