NTMD2C02R2G datasheet(2/12 Pages) ONSEMI

2 / 12 page

NTMD2C02R2

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 mAdc)

V(BR)DSS

(N)

(P)

−

Vdc

Zero Gate Voltage Drain Current

(VGS = 0 Vdc, VDS = 20 Vdc)

(VGS = 0 Vdc, VDS = 12 Vdc)

IDSS

(N)

(P)

−

1.0

mAdc

Gate−Body Leakage Current

(VGS = ±12 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

VGS(th)

(N)

(P)

0.6

0.9

1.2

Vdc

Drain−to−Source On−Resistance

(VGS = 4.5 Vdc, ID = 4.0 Adc)

(VGS = 4.5 Vdc, ID = 2.4 Adc)

RDS(on)

(N)

(P)

−

0.07

0.028

−

0.043

0.1

Drain−to−Source On−Resistance

(VGS = 2.7 Vdc, ID = 2.0 Adc)

(VGS = 2.7 Vdc, ID = 1.2 Adc)

RDS(on)

(N)

(P)

−

0.1

0.033

−

0.048

0.13

Forward Transconductance

(VDS = 2.5 Vdc, ID = 2.0 Adc)

(VDS = 2.5 Vdc, ID = 1.0 Adc)

gFS

(N)

(P)

3.0

6.0

4.75

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

(N)

(P)

−

785

540

1100

750

Output Capacitance

Coss

(N)

(P)

−

210

215

450

325

Transfer Capacitance

Crss

(N)

(P)

−

100

180

175

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

(VDD = 16 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 W)

(VDD = 10 Vdc, ID = 1.2 Adc,

VGS = 2.7 Vdc,

RG = 6.0 W)

td(on)

(N)

(P)

−

Rise Time

(N)

(P)

−

Turn−Off Delay Time

td(off)

(N)

(P)

−

Fall Time

(N)

(P)

−

110

−

Turn−On Delay Time

(VDS = 16 Vdc, ID = 6.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 W)

(VDS = 10 Vdc, ID = 2.4 Adc,

VGS = 4.5 Vdc,

RG = 6.0 W)

td(on)

(N)

(P)

−

Rise Time

(N)

(P)

−

Turn−Off Delay Time

td(off)

(N)

(P)

−

Fall Time

(N)

(P)

−

130

Total Gate Charge

(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc)

(N)

(P)

−

Gate−Source Charge

(N)

(P)

−

1.5

−

Gate−Drain Charge

(N)

(P)

−

4.0

5.0

−

(N)

(P)

−

3.0

−

3. Negative signs for P−Channel device omitted for clarity.

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

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