2SA2013 / 2SC5566

No.6307-2/8

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

Collector Current

IC

(--)4

A

Collector Current (Pulse)

ICP

(--)7

A

Base Current

IB

(--)600

mA

Collector Dissipation

PC

1.3

W

Tc=25°C

3.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=(--)40V, IE=0A

(--)1

μA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0A

(--)1

μA

DC Current Gain

hFE

VCE=(--)2V, IC=(--)500mA

200

560

Gain-Bandwidth Product

fT

VCE=(--)10V, IC=(--)500mA

(360)400

MHz

Output Capacitance

Cob

VCB=(--)10V, f=1MHz

(24)15

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)1

IC=(--)1A, IB=(--)50mA

(--105)85

(--180)130

mV

VCE(sat)2

IC=(--)2A, IB=(--)100mA

(--200)150

(--340)225

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=(--)2A, IB=(--)100mA

(--)0.89

(--)1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(--)10μA, IE=0A

(--50)100

V

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=(--)100μA, RBE=0Ω

(--50)100

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(--)1mA, RBE=∞

(--)50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=(--)10μA, IC=0A

(--)6

V

Turn-ON Time

ton

See specified Test Circuit.

(30)35

ns

Storage Time

tstg

(230)300

ns

Fall Time

tf

(15)20

ns

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

2SA2013-TD-E

PCP

1,000pcs./reel

Pb Free

2SC5566-TD-E

PCP

1,000pcs./reel

VR10

RB

VCC=25V

VBE= --5V

+

+

50

Ω

INPUT

OUTPUT

RL

25

Ω

100

μF

470

μF

PW=20

μs

IB1

D.C.

≤1%

IB2

IC=10IB1= --10IB2=1A

For PNP, the polarity is reversed.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.