TPCP8701 datasheet(1/5 Pages) TOSHIBA

tên linh kiện	TPCP8701

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TPCP8701

2004-05-11

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

TPCP8701

Portable Equipment Applications

Switching Applications

Inverter Lighting Applications

• Small footprint due to small and thin package

• High DC current gain : hFE = 400 to 1000 (IC = 0.3 A)

• Low collector-emitter saturation : VCE (sat) = 0.14 V (max)

• High-speed switching : tf = 120 ns (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

100

V

VCEX

80

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

7

V

DC (Note 1)

IC

3.0

Collector current

Pulse (Note 1 )

ICP

5.0

A

Base current

IB

300

mA

Single-device

operation

1.77

Collector power

dissipation (t = 10s)

Single-device

value at dual

operation

Pc (Note 2)

0.95

W

Single-device

operation

0.94

Collector power

dissipation (DC)

Single-device

value at dual

operation

Pc (Note 2)

0.54

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note 1: Please use devices on condition that the junction temperature is

below 150°C.

Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

2)

Note 3: ● on lower left on the marking indicates Pin 1.

※

Weekly code: (Three digits)

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3V1C

Weight: 0.017 g (typ.)

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

Figure 1.

Circuit configuration

(Top View)

Figure 2. Marking

(Note 3)

Type

Lot No.

(Weekly code)

8701

8　 7

6 　 5

1　 2　 3

4

※

1　 2　 3　 4

8　　7 　6 　5

0.33±0.05

0.28

+0.1

-0.11

1.12

+0.13

-0.12

0.475

0.65

A

0.05 M

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

0.05 M

A

S

0.025

S

1.12

+0.13

-0.12

0.28

+0.1

-0.11

1.Emitter1

2.Base1

3.Emitter2

4.Base2

5.Collector2

6.Collector2

7.Collector1

8.Collector1

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