1

2

3

4

8

7

6

5

V

IN+

V

IN-

CMP

OUT

RESET

V+

OUT

CMP

IN

GND

INA200-INA202

MSOP-8(DGK),

SO-8(D)

INA200

INA201

INA202

SBOS374C – NOVEMBER 2006 – REVISED OCTOBER 2010

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE

PRODUCT

GAIN

PACKAGE-LEAD

DESIGNATOR

PACKAGE MARKING

MSOP-8

DGK

BQH

INA200

20V/V

SO-8

D

INA200A

MSOP-8

DGK

BQJ

INA201

50V/V

SO-8

D

INA201A

MSOP-8

DGK

BQL

INA202

100V/V

SO-8

D

INA202A

(1)

For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the

device product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

VALUE

UNIT

Supply Voltage, V+

18

V

–18 to +18

V

–16 to +80

V

GND – 0.3 to (V+) + 0.3

V

GND – 0.3 to (V+) + 0.3

V

GND – 0.3 to 18

V

5

mA

Operating Temperature

–55 to +150

°C

Storage Temperature

–65 to +150

°C

Junction Temperature

+150

°C

ES

Human Body Model (HBM)

4000

V

D

Charged Device Model (CDM)

1000

V

Rat

ing

s

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not supported.

(2)

This voltage may exceed the ratings shown if the current at that pin is limited to 5mA.

PIN CONFIGURATIONS

2

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