DS90C032

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SNLS094D – JUNE 1998 – REVISED APRIL 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

−0.3V to +6V

Enable Input Voltage

(EN, EN*)

Maximum Package Power Dissipation at +25°C

D Package

1025 mW

NAJ Package

1830 mW

Derate D Package

8.2 mW/°C above +25°C

Derate NAJ Package

12.2 mW/°C above +25°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature Range Soldering (4 seconds)

+260°C

Maximum Junction Temperature (DS90C032T)

+150°C

Maximum Junction Temperature (DS90C032E)

+175°C

ESD Ratings

(HBM, 1.5 k

Ω, 100 pF)

≥ 3500V

(EIAJ, 0

Ω, 200 pF)

≥ 250V

(1)

"Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be ensured. They are not meant to imply

that the devices should be operated at these limits. The table of "Electrical Characteristics" specifies conditions of device operation.

(2)

Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground

unless otherwise specified.

Recommended Operating Conditions

(1) (2)

Min

Typ

Max

Units

+4.5

+5.0

+5.5

V

Receiver Input Voltage

GND

2.4

V

DS90C032T

−40

+25

+85

°C

DS90C032E

−55

+25

+125

°C

(1)

"Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be ensured. They are not meant to imply

that the devices should be operated at these limits. The table of "Electrical Characteristics" specifies conditions of device operation.

(2)

Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground

unless otherwise specified.

Copyright © 1998–2013, Texas Instruments Incorporated

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