AVT-53663 datasheet(2/13 Pages) AVAGO

2 / 13 page

Absolute Maximum Rating[1] TA=25°C

Symbol

Parameter

Units

Absolute Max.

Device Current

PIN,MAX

CW RF Input Power

dBm

PDISS

Total Power Dissipation [3]

327

TOPT

Operating Temperature

°C

-40 to 85

TJ,MAX

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to 150

Thermal Resistance

Thermal Resistance [2]

jc = 184°C/W

(Id = 48 mA, Tc = 85°C)

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infrared

measurement technique.

3. Ground lead temperature is 25°C. Derate

5.5mW/°C for Tc >90°C.

Electrical Specifications [1]

TA = 25°C, Zo = 50

, VCC = 5 V, Rbias = 22 , Pin = -15 dBm (unless specified otherwise)

Symbol

Parameter and Test Condition

Frequency

Units

Min.

Typ.

Max.

Device Current

44.0

47.6

51.0

Power Gain

900 MHz

2000 MHz

18.0

21.8

19.5

21.0

OIP3 [2]

Output 3rd Intercept Point

900 MHz

2000 MHz

dBm

25.0

28.9

26.5

S11

Input Return Loss, 50

 source

900 MHz

2000 MHz

-16.5

-12.0

S22

Output Return Loss, 50

 load

900MHz

2000 MHz

-17.3

-13.4

S12

Reverse Isolation

900 MHz

2000 MHz

-24.3

-24.7

P1dB

Output Power at 1dB Gain Compression

900 MHz

2000 MHz

dBm

16.0

15.1

Noise Figure

900 MHz

2000 MHz

2.9

3.2

Notes:

1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).

2. OIP3 test condition: FRF1 - FRF2 = 10MHz with input power of -23 dBm per tone measured at worse side band.

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