0AT3G datasheet(2/7 Pages) ONSEMI

2 / 7 page

Uni−Directional TVS

IPP

VRWM

VC VBR

1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation (Note 1) @ TL = 25C, Pulse Width = 1 ms

PPK

600

DC Power Dissipation @ TL = 75C Measured Zero Lead Length (Note 2)

Derate Above 75C

Thermal Resistance from Junction−to−Lead

RqJL

3.0

mW/C

C/W

DC Power Dissipation (Note 3) @ TA = 25C

Derate Above 25C

Thermal Resistance from Junction−to−Ambient

RqJA

0.55

4.4

226

mW/C

C/W

Forward Surge Current (Note 4) @ TA = 25C

IFSM

100

Operating and Storage Temperature Range

TJ, Tstg

−65 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 10 X 1000 ms, non−repetitive.

2. 1 in square copper pad, FR−4 board.

3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.

ELECTRICAL CHARACTERISTICS (TA = 25C unless

otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

Forward Current

Forward Voltage @ IF

5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,

non−repetitive duty cycle.

0AT3G bảng dữ liệu(PDF) 2 Page - ON Semiconductor

0AT3G bảng dữ liệu(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL