RJF0610DSP datasheet(2/8 Pages) RENESAS

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RJF0610DSP

Target Specifications

R07DS0560EJ0200 Rev.2.00

Page 2 of 7

Apr 16, 2012

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

VIH

3.5

—

Input voltage

VIL

—

1.2

IIH1

—

100

A

Vi = 5 V, VDS = 0

IIH2

—

A

Vi = 3.5 V, VDS = 0

Input current

(Gate non shut down)

IIL

—

A

Vi = 1.2 V, VDS = 0

IIH(sd)1

—

0.4

—

Vi = 8 V, VDS = 0

IIH(sd)2

—

0.24

—

Vi = 5 V, VDS = 0

Input current

(Gate shut down)

IIH(sd)3

—

0.16

—

Vi = 3.5 V, VDS = 0

Shut down temperature

Tsd

—

175

—

C

Channel temperature

Return temperature

Thr

—

120

—

C

Channel temperature

Gate operation voltage

Vop

3.5

—

Drain current

(Current limitation value)

ID limit

1.5

—

VGS = 5 V, VDS = 10 V

Note 5

Notes; 5. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

ID1

—

2.4

VGS = 3.5 V, VDS = 2 V

ID2

—

VGS = 1.2 V, VDS = 2 V

Drain current

ID3

1.5

—

VGS = 5 V, VDS = 10 V

Note 6

Drain to source breakdown voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

V(BR)GSS

—

IG = 500 A, VDS = 0

Gate to source breakdown voltage

V(BR)GSS

–2.5

—

IG = –100 A, VDS = 0

IGSS1

—

100

A

VGS = 5 V, VDS = 0

IGSS2

—

A

VGS = 3.5 V, VDS = 0

IGSS3

—

A

VGS = 1.2 V, VDS = 0

Gate to source leak current

IGSS4

—

–100

A

VGS = –2.4 V, VDS = 0

IGS(OP)1

—

0.4

—

VGS = 8 V, VDS = 0

IGS(OP)2

—

0.24

—

VGS = 5 V, VDS = 0

Input current (shut down)

IGS(OP)3

—

0.16

—

VGS = 3.5 V, VDS = 0

Zero gate voltage drain current

IDSS

—

A

VDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.4

—

2.5

ID = 1 mA, VDS = 10 V

RDS(on)

—

207

285



ID = 0.7 A, VGS = 5 V

Note 6

Static drain to source on state

resistance

RDS(on)

—

153

214



ID = 0.7 A, VGS = 10 V

Note 6

Output capacitance

Coss

—

267

—

VDS = 10 V, VGS = 0, f = 1MHz

Turn-on delay time

td(on)

—

4.3

—

s

Rise time

—

18.3

—

s

Turn-off delay time

td(off)

—

0.62

—

s

Fall time

—

0.61

—

s

ID= 0.7 A, VGS = 5 V, RL = 43 

Body-drain diode forward voltage

VDF

—

0.8

—

IF = 1.5 A, VGS = 0

Body-drain diode reverse recovery

time

trr

—

IF = 1.5 A, VGS = 0

diF/dt = 50 A/s

tos1

—

VGS = 5 V, VDD = 16 V

Over load shut down

operation time

Note 7

tos2

—

5.7

—

VGS = 5 V, VDD = 24 V

Notes: 6. Pulse test

7. Including the junction temperature rise of the over loaded condition.

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