RJF0605DPD datasheet(4/8 Pages) RENESAS

tên linh kiện	RJF0605DPD

Giải thích chi tiết về linh kiện	Silicon N Channel MOS FET Series Power Switching

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	RENESAS [Renesas Technology Corp]

Trang chủ	http://www.renesas.com

Logo

4 / 8 page

RJF0605DPD

Target Specifications

R07DS0714EJ0100 Rev.1.00

Page 4 of 7

Apr 17, 2012

–50 –25

75 100

150

125

Pulse Test

10 V

VGS = 4 V

ID = 10 A

2 A

5 A

100

0.1

100

Tc = –40°C

150°C

VDS = 10 V

Pulse Test

25°C

0.1

100

1000

100

di / dt = 50 A /

μs

VGS = 0, Ta = 25°C

010

10000

3000

1000

300

100

0.2

0.4

0.6

0.8

1.0

VGS = 5 V

100

0.1

Pulse Test

td(off)

td(on)

0 V

VGS = 10 V, VDD = 30 V

PW = 300

μs, duty ≤ 1 %

Coss

VGS = 0

f = 1 MHz

Case Temperature

Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Drain Current

ID (A)

Switching Characteristics

RJF0605DPD bảng dữ liệu(PDF) 4 Page - Renesas Technology Corp

RJF0605DPD bảng dữ liệu(HTML) 4 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL