IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA140P05T IXTP140P05T

IXTH140P05T

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

44

72

S

C

iss

13.5

nF

C

oss

V

1640

pF

C

rss

640

pF

t

d(on)

28

ns

t

r

34

ns

t

d(off)

38

ns

t

f

25

ns

Q

g(on)

200

nC

Q

gs

V

50

nC

Q

gd

65

nC

R

thJC

0.42

°C/W

R

thCS

TO-220

0.50

°C/W

TO-247

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

-140

A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 560

A

V

SD

I

-1.3

V

t

rr

53

ns

Q

RM

58

nC

I

RM

- 2.2

A

Resistive Switching Times

V

R

I

V

TO-247 Outline

Pins:

1 - Gate

2 - Drain

3 - Source

TO-220 Outline

1 = Gate

2 = Drain

3 = Source

TO-263 Outline

Pins:

1 - Gate

2,4 - Drain

3 - Source