1

MRF899

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

RF Power Transistor

Designed for 26 Volt UHF large–signal, common emitter, Class AB linear

amplifier applications in industrial and commercial FM / AM equipment operating

in the range 800 – 960 MHz.

• Specified 26 Volt, 900 MHz Characteristics

Output Power = 150 Watts (PEP)

Minimum Gain = 8.0 dB @ 900 MHz, Class AB

Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)

Maximum Intermodulation Distortion – 28 dBc @ 150 Watts (PEP)

• Characterized with Series Equivalent Large–Signal Parameters from 800

to 960 MHz

• Silicon Nitride Passivated

• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR

@ 26 Vdc, and Rated Output Power

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

28

Vdc

Collector–Emitter Voltage

VCES

60

Vdc

Emitter–Base Voltage

VEBO

4.0

Vdc

Collector–Current — Continuous

IC

25

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

230

1.33

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to + 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.75

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)

V(BR)CEO

28

37

—

Vdc

Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)

V(BR)CES

60

85

—

Vdc

Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

4.0

4.9

—

Vdc

Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)

ICES

—

—

10

mAdc

ON CHARACTERISTICS

DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc)

hFE

30

75

120

—

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)

Cob

—

75

—

pF

(1) For information only. This part is collector matched.

(continued)

Order this document

by MRF899/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF899

150 W, 900 MHz

RF POWER

TRANSISTOR

NPN SILICON

CASE 375A–01, STYLE 1

REV 7