2SC5814 datasheet(1/2 Pages) ISAHAYA

tên linh kiện	2SC5814

Giải thích chi tiết về linh kiện	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

PDF	2 Pages

Scroll/Zoom	100%

nhà sản xuất	ISAHAYA [Isahaya Electronics Corporation]

Trang chủ	http://www.idc-com.co.jp

Logo

1 / 2 page

DESCRIPTION

2SC5814 is a super mini package silicon NPN epitaxial

type transistor.

It is designed for low frequency voltage application.

FEATURE

●Low collector to emitter saturation voltage.

VCE(sat)=0.3V max(@I

C=30mA, IB=1.5mA)

●Facilitates miniaturization and high-density mouting.

●Excellent linearity of DC forward current gain.

APPLICATION

For hybrid IC, small type machine low frequency voltage

amplify application.

Item

Q

R

S

ｈ

ＦＥ

120～270

180～390

Marking

EQ

ER

ES

Item

E

F

ｈ

ＦＥ

150～300

250～500

Marking

EE

EF

〈SMALL-SIGNAL TRANSISTOR〉

2SC5814

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

OUTLINE DRAWING

Unit：ｍｍ

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

V

CBO

Collector to Base voltage

60

V

EBO

Emitter to Base voltage

6

V

CEO

Collector to Emitter voltage

60

V

I

O

Collector current

125

mA

P

c

Collector dissipation

150

mW

T

j

Junction temperature

＋125

℃

T

stg

Storage temperature

-55～＋125

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

C to E break down voltage

V(BR)CEO

I

C=1uA ,R BE=∞

60

-

V

Collector cut off current

ICBO

V

CB=60V, I E=0mA

-

0.5

μA

Emitter cut off current

IEBO

V

EB=4V, I C=0mA

-

0.5

μA

DC forward current gain

hFE

V

CE=6V, I C=1mA

※

120

-

560

-

DC forward current gain

hFE

V

CE=6V, I C=0.1mA

70

-

C to E Saturation Vlotage

VCE(sat)

I

C=30mA ,IB=1.5mA

-

0.3

V

Gain bandwidth product

fT

V

CE=6V, I E=-10mA

-

200

-

MHz

Collector output capacitance

Cob

V

CB=6V, I E=0mA,f=1MHz

-

1.5

-

pF

※ It shows ｈ

ＦＥ classification in below table.

JEITA：SC-59

JEDEC:similar to TO-236

TERMINAL CONNECTER

①：BASE

②：EMITTER

③：COLLECTOR

ISAHAYA ELECTRONICS CORPORATION

MARKING

ＥＲ

TYPE NAME

ｈＦＥ ITEM

Số phần tương tự - 2SC5814

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Isahaya Electronics Cor...	2SC5814	195Kb / 5P	For Low Frequency Amplify Application Silicon NPN Epitaxial Type

More results

Mô tả tương tự - 2SC5814

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
List of Unclassifed Man...	2SC5214	155Kb / 3P	For Low Frequency Amplify Application Silicon Npn Epitaxial Type
Isahaya Electronics Cor...	2SC5814	195Kb / 5P	For Low Frequency Amplify Application Silicon NPN Epitaxial Type
	2SC5938A	89Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC3052	189Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC3928A	138Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC4155	138Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC4155A	139Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC5383	184Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	INA6002AC1	70Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
	INC6006AS1	151Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

More results

2SC5814 bảng dữ liệu(PDF) 1 Page - Isahaya Electronics Corporation

2SC5814 bảng dữ liệu(HTML) 1 Page - Isahaya Electronics Corporation

Số phần tương tự - 2SC5814

Mô tả tương tự - 2SC5814

Html Pages

1 2

bảng dữ liệu tải về

Link URL