SIC401DB datasheet(4/28 Pages) VISHAY

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Document Number: 63835

S12-2109-Rev. C, 03-Sep-12

Vishay Siliconix

SiC401A, SiC401BCD

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: powerictechsupport@vishay.com

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,

and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is

not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Electrical Parameter

Conditions

Limits

Unit

VIN

to PGND

- 0.3 to + 20

VIN

to VDD

- 0.4 max.

to PGND

- 0.3 to + 20

LX (Transient < 100 ns)

to PGND

- 2 to + 20

VDD

to PGND

- 0.3 to + 6

EN/PSV, PGOOD, ILIM

Reference to PGND

- 0.3 to + (VDD + 0.3)

tON

to PGND

- 0.3 to + (VDD - 1.5)

BST

to LX

- 0.3 to + 6

to PGND

- 0.3 to + 25

ENL

- 0.3 to VIN

AGND to PGND

- 0.3 to + 0.3

Temperature

Maximum Junction Temperature

150

°C

Storage Temperature

- 65 to 150

Power Dissipation

Junction to Ambient Thermal Impedance (RthJA)

(b)

IC Section

°C/W

Maximum Power Dissipation

Ambient Temperature = 25 °C

3.4

Ambient Temperature = 100 °C

1.3

ESD Protection

HBM

RECOMMENDED OPERATING CONDITIONS

(all voltages referenced to GND = 0 V)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Input Voltage

VIN

317

VDD to PGND

35.5

Output Voltage

VOUT

0.6

5.5

Temperature

Ambient Temperature

- 40 to 85

°C

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