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DRB35L bảng dữ liệu(PDF) 1 Page - Gaomi Xinghe Electronics Co., Ltd.

tên linh kiện DRB35L
Giải thích chi tiết về linh kiện  Rating at 25??Ambient temp. Unless otherwise specified. Single phase, half sine wave, 60HZ,resistive or inductive load.
PDF  2 Pages
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nhà sản xuất  GXELECTRONICS [Gaomi Xinghe Electronics Co., Ltd.]
Trang chủ  http://www.sddzg.com
Logo GXELECTRONICS - Gaomi Xinghe Electronics Co., Ltd.

DRB35L bảng dữ liệu(HTML) 1 Page - Gaomi Xinghe Electronics Co., Ltd.

  DRB35L Datasheet HTML 1Page - Gaomi Xinghe Electronics Co., Ltd. DRB35L Datasheet HTML 2Page - Gaomi Xinghe Electronics Co., Ltd.  
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DRB35L THRU DRB35H
BOSCH
特性:FEATURES
◆正向压降低.Low forward voltage drop
◆低漏电. Low leakage current
.
◆高浪涌承受能力.High surge current capability
◆50A 工作在表面温度是125℃,无热损耗的情况下.
50Ampere Operation At TL=125℃ With No Thermal Runaway
机械性能:MECHANICAL DATA
◆封装:铜材质. Case: Copper
◆端子:镀银端子,焊接按照 MIL-STD-202,方法 208.
Terminals: solderable per
MIL-STD-202, method 208.
◆极性: 灌注红色环氧树脂(端子为正/P 型)
灌注黑色环氧树脂(端子为负/N 型)
Polarity : By RED Color Epoxy Potting. (Positive)
By BLACK Color Epoxy Potting. (Negative)
◆重量:6.8 克. Weight: 6.8grams
Dimension in millimeters
极限值和电参数
TA= 25℃除非另有规定. 单相,正半弦波,60HZ,阻抗或电感负载.为电容装载,减少电流的 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.
型
号 TYPE
符 号
DRB35L
DRB35M
DRB35H
单 位
最大峰值反向电压
Maximum Current Peak Reverse Voltage
VRRM
16
20
28
V
最大反向有效值电压
Working Peak Reverse Voltage
VRMS
16
20
28
V
最大直流截止电压
Maximum DC Blocking Voltage
VDC
16
20
28
V
击穿电压最小值
Breakdown voltage Min@IBR=100mA/TA=25℃
VBRL
20
24
36
V
击穿电压最大值
Breakdown voltage Max@IBR=100mA/TA=25℃
VBRH
26
32
42
V
最大正向平均整流电流Ta=125℃,
Maximum Average Forward Rectified Current
IF(AV)
35
A
峰值正向浪涌电流
Peak Forward Surge Current 8.3ms Single
Sine-wave on Rated Load (JEDEC Method)
IFSM
400
A
最大瞬间正向压降@100A
Maximum Instantaneous Forward Voltage
Drop at 100A DC
VF
1.04
V
最大反向直流电流 t=200ms
Maximum DC Reverse Current
Ta = 25℃
at Rated DC Blocking Voltage
Ta =150℃
IR
1.0
100
μA
工作及储存温度范围
Operating AND Storage Temperature Range
TJ
,TSTG
-55~+150
℃
注
释 : NOTE 在 1MHz 下测量,施加 4.0V D.C 的反向电压. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
XINGHE ELECTRONICS
星合电子
GAOMI XINGHE ELECTRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017
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