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2N5686 bảng dữ liệu(PDF) 3 Page - ON Semiconductor

tên linh kiện 2N5686
Giải thích chi tiết về linh kiện  High-Current Complementary Silicon Power Transistors
PDF  5 Pages
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2N5686 bảng dữ liệu(HTML) 3 Page - ON Semiconductor

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2N5684 (PNP), 2N5686 (NPN)
http://onsemi.com
3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
2000
500
θJC(t) = r(t) θJC
θJC = 0.584°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.05
0.02
0.01
SINGLE PULSE
0.1
1000
0.2
100
1.0
Figure 5. Active-Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
0.1
2.0
3.0
7.0
10
20
30
50
100
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
70
2.0
TJ = 200°C
CURVES APPLY BELOW
RATED VCEO
dc
1.0 ms
500
μs
1.0
0.5
0.2
5.0
100
μs
5.0 ms
2N5684, 2N5686
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
4.0
0.5
Figure 6. Turn-Off Time
IC, COLLECTOR CURRENT (AMP)
2.0
1.0
0.6
0.4
0.2
0.7 1.0
2.0
3.0
7.0
20
50
TJ = 25°C
IB1 = IB2
IC/IB = 10
VCE = 30 V
0.3
ts
5.0
5000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
500
2.0
5.0
10
20
100
50
0.2
0.5
1.0
3000
1000
700
TJ = 25°C
0.8
3.0
30
2000
10
2N5684 (PNP)
2N5686 (NPN)
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Cib
2N5684 (PNP)
2N5686 (NPN)
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