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DF005S bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

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DF005S bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

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DF005S thru DF10S
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88573
Revision: 30-Jan-08
2
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL DF005S
DF01S
DF02S
DF04S
DF06S
DF08S
DF10S
UNIT
Maximum instantaneous
forward voltage drop per diode
1.0 A
VF
1.1
V
Maximum DC reverse
current at rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C
IR
5.0
500
µA
Typical junction
capacitance per diode (1)
CJ
25
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF005S
DF01S
DF02S
DF04S
DF06S
DF08S
DF10S
UNIT
Typical thermal resistance (1)
RθJA
RθJL
40
15
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
DF06S-E3/45
0.399
45
50
Tube
DF06S-E3/77
0.399
77
1500
13" diameter paper tape and reel
Figure 1. Derating Curve Output Rectified Current
20
40
60
80
100
120
140
160
0
0.5
1.0
Ambient Temperature (°C)
60 Hz
Resistive or
Inductive Load
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
0
10
20
30
40
50
60
Number of Cycles at 60 Hz
T
J = 150 °C
Single Sine-Wave
1.0 Cycle



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