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STM32L152C6 bảng dữ liệu(PDF) 71 Page - STMicroelectronics

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STM32L152C6 bảng dữ liệu(HTML) 71 Page - STMicroelectronics

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STM32L151x6/8/B, STM32L152x6/8/B
Electrical characteristics
Doc ID 17659 Rev 8
71/121
6.3.6
Internal clock source characteristics
The parameters given in Table 30 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Table 30.
HSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
VDD = 3.0 V
16
MHz
TRIM
(1)(2)
1.
The trimming step differs depending on the trimming code. It is usually negative on the codes which are
multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).
HSI user-trimmed
resolution
Trimming code is not a multiple of 16
± 0.4
0.7
%
Trimming code is a multiple of 16
± 1.5
%
ACCHSI
(2)
2.
Based on characterization, not tested in production.
Accuracy of the
factory-calibrated
HSI oscillator
VDDA = 3.0 V, TA = 25 °C
-1(3)
3.
Tested in production.
1(3)
%
VDDA = 3.0 V, TA = 0 to 55 °C
-1.5
1.5
%
VDDA = 3.0 V, TA = -10 to 70 °C
-2
2
%
VDDA = 3.0 V, TA = -10 to 85 °C
-2.5
2
%
VDDA = 3.0 V, TA = -10 to 105 °C
-4
2
%
VDDA = 1.65 V to 3.6 V
TA = -40 to 105 °C
-4
3
%
tSU(HSI)
(2)
HSI oscillator
startup time
3.7
6
µs
IDD(HSI)
(2)
HSI oscillator
power consumption
100
140
µA
Table 31.
LSI oscillator characteristics
Symbol
Parameter
Min
Typ
Max
Unit
fLSI
(1)
1.
Tested in production.
LSI frequency
26
38
56
kHz
DLSI
(2)
2.
This is a deviation for an individual part, once the initial frequency has been measured.
LSI oscillator frequency drift
0°C
≤ TA ≤ 85°C
-10
4
%
tsu(LSI)
(3)
3.
Guaranteed by design, not tested in production.
LSI oscillator startup time
200
µs
IDD(LSI)
(3)
LSI oscillator power consumption
400
510
nA



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